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300ma high speed, extremely low noise cmos ldo regulator ap2126 1 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet general description the ap2126 series are positive voltage regulator ics fabricated by cmos process. the ap2126 series have features of low dropout voltage, low noise, high out put voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. ap2126 is available in 1.25v to 5.5v adjustable voltage versions. ap2126 series are available in sot-23-5 package. features wide operating voltage: 3.0v to 6v high output voltage accuracy: 2% high ripple rejection: 68db@ f=1khz, 54db@ f=10khz low standby current: 0.1 a low dropout voltage: 170mv@300ma for v out =3.3v, 140mv@300ma for v out =5.2v low quiescent current: 60 a typical low output noise: 80 vrms@v out =1.25v short current limit: 50ma over temperature protection compatible with low esr ceramic capacitor: 1 f for c in and c out excellent line/load regulation soft start time: 50 s auto discharge resistance: r ds(on) =60 applications datacom notebook computers mother board figure 1. package type of ap2126 sot-23-5
300ma high speed, extremely low noise cmos ldo regulator ap2126 2 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ap2126 (top view) pin configuration functional block diagram k package (sot-23-5) v in gnd v out adj shutdown figure 3. functional block diagram of ap2126 1 2 34 5 shutdown and logic control current limit and thermal protection mos driver v ref shutdown gnd v in v out adj
300ma high speed, extremely low noise cmos ldo regulator ap2126 3 bcd semiconductor manufacturing limited data sheet sep. 2012 rev. 1. 5 bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green. circuit type package k: sot-23-5 ap2126 - tr: tape and reel ordering information g1: green adj: adj output package temperature range part number marking id packing type sot-23-5 -40 to 85 o c AP2126K-ADJTRG1 ghh tape & reel
300ma high speed, extremely low noise cmos ldo regulator ap2126 4 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet parameter symbol value unit input voltage v in 6.5 v shutdown input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (junction to ambient) ja 250 o c/w esd (human body model) esd 6000 v esd (machine model) esd 250 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 3.0 6 v operating ambient temperature range t a -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator ap2126 5 bcd semiconductor manufacturing limited data sheet sep. 2012 rev. 1. 5 electrical characteristics (ap2126-adj, v in min=3.0v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t a 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit reference voltage v ref v in =3.0v 1ma i out 300ma 1.225 1.25 1.275 v input voltage v in 3.0 6 v maximum output current i out(max) v in =3.0v, v out =98% v out 300 400 ma load regulation v out /( i out* v out ) v in =3.0v, 1ma i out 300ma 0.6 %/a line regulation v out /( v in *v out ) v in =3.0v to 6v i out =30ma 0.06 %/v quiescent current i q v in =3.0v, i out = 0ma 60 90 a standby current i std v in =3.0v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =3.5v f=100hz 68 db f=1khz 68 db f=10khz 54 db output voltage temperature coefficient ( v out /v out ) / t i out =30ma, -40 o c t a 85 o c 100 ppm/ o c short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz, v out =1.25v 80 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 shutdown pull down resis- tance 3m thermal shutdown 165 o c thermal shutdown hysteresis 30 o c thermal resistance jc sot-23-5 150 o c/w
300ma high speed, extremely low noise cmos ldo regulator ap2126 6 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet typical performance characteristics 0.00.10.20.30.40.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v, v out =3.3v figure 4. output voltage vs. output current 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (a) v in =3.8v v in =4.3v v in =6v t c =25 0 c, v out =3.3v figure 5. output voltage vs. output current figure 6. dropout volt age vs. output current 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 220 240 dropout voltage (mv) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v out =3.3v -40-20 0 20406080 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 dropout voltage (v) case temperature ( o c) i out =10ma i out =150ma i out =300ma v in =4.3v, v out =3.3v figure 7. dropout voltage vs. case temperature
300ma high speed, extremely low noise cmos ldo regulator ap2126 7 bcd semiconductor manufacturing limited data sheet sep. 2012 rev. 1. 5 typical performance ch aracteristics (continued) 0 50 100 150 200 250 300 65 70 75 80 85 90 95 100 105 110 115 quiescent current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v, v out =3.3v figure 8. quiescent curr ent vs. output current -40-20 0 20406080100120 62 63 64 65 66 67 68 69 70 71 quiescent current ( a) case temperature ( o c) i out =0 v in =4.3v v out =3.3v figure 9. quiescent current vs. case temperature 0123456 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =25 o c i out =0 v out =3.3v figure 10. quiescent cu rrent vs. input voltage figure 11. output voltage vs. case temperature -40 -20 0 20 40 60 80 100 120 3.326 3.328 3.330 3.332 3.334 3.336 3.338 3.340 3.342 3.344 3.346 3.348 output voltage (v) case temperature ( o c) i out =10ma v in =4.3v v out =3.3v
300ma high speed, extremely low noise cmos ldo regulator ap2126 8 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 13. load transient (conditions: c in =c out =1 f, v in =4.4v, v out =3.3v v out i out i out =10ma to 300ma) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c i out =0, v out =3.3v figure 12. output voltage vs. input voltage figure 14. line transient (conditions: i out =30ma, c in =c out =1 f, v in =4 to 5v, v out =3.3v) v in v out figure 15. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =3.3v) v out v shutdown
300ma high speed, extremely low noise cmos ldo regulator ap2126 9 bcd semiconductor manufacturing limited data sheet sep. 2012 rev. 1. 5 typical performance ch aracteristics (continued) figure 16. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =3.3v
300ma high speed, extremely low noise cmos ldo regulator ap2126 10 sep. 2012 rev. 1. 5 bcd semiconductor manufacturing limited data sheet typical application figure 17. typical application of ap2126 v out =1.25*(1+r1/r2) v v in v in v out v out adj shutdown gnd c out 1 f c in 1 f r1 r2 ap2126
300ma high speed, extremely low noise cmos ldo regulator ap2126 11 bcd semiconductor manufacturing limited data sheet sep. 2012 rev. 1. 5 mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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